To achieve the tight degree of within-chip etch control needed for such precise patterning, the new system creates a dramatically cleaner chamber environment that significantly accelerates the removal of etch byproducts—a major cause of variation. Both larger chamber volume and higher gas flows minimize the amount of byproduct that redeposits on the wafer, where it can pinch off narrow spaces and create etch depth variations, cause unacceptable variations between densely packed and isolated features, or exacerbate line edge roughness. Preventing byproduct accumulation also reduces particle formation and resultant defect creation.
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